• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    A wafer processing method comprising a tape attaching step of attaching a tape (T1) to the front side (11a) of a wafer (11) and fixing the wafer (11) to said tape (T1) on an annular frame (F1) comprising a separating step holding the wafer (11) by the belt (T1) on a chuck table (16) and applying a laser beam to the boundary between an annular protrusion (20) formed along the outer circumference of the wafer (11) and one A device region (17) surrounded by the annular projection (20) for cutting the wafer (11) and the tape (T1) along this boundary, thereby separating the device region (17) from the annular projection (20), and a Removal step consisting of removing the annular projection (20) together with the annular frame (F1) from the component area (17) of the wafer (11) in the state where the annular projection (20) passes through the tape (T1) attached to the annular frame (F1).
    公开号:AT515730A2
    申请号:T50400/2015
    申请日:2015-05-13
    公开日:2015-11-15
    发明作者:
    申请人:Disco Corp；
    IPC主号:
    专利说明:

    The invention relates to a method of processing a wafer having a circular recess on the back side of the wafer and an annular projection surrounding the circular recess, the annular projection being removed from the wafer by the method.
    In the manufacture of a semiconductor device, a plurality of intersecting split lines, called streets, are formed on the front side of a substantially disk-shaped semiconductor wafer (which will also be referred to simply as a wafer hereinafter) to thereby define a plurality of separate regions where multiple devices, such as ICs and LSIs. The semiconductor wafer is cut along the streets by means of a cutting device, whereby the wafer is divided into a plurality of individual semiconductor chips (components).
    Prior to cutting the wafer along the streets, the back side of the wafer is ground to reduce the thickness of the wafer to a predetermined thickness. In recent years, it has been necessary to reduce the thickness of the wafers to a smaller value, e.g. to about 50 pm to achieve the miniaturization (reduction of size and weight) of electrical units. Such a thin wafer lacks stiffness like a sheet of paper, and it is difficult to machine, which is why it is possible for the wafer to be damaged during transfers. To cope with this problem, for example, in Japanese Patent Application Laid-open No. 2007-19461, there has been proposed a grinding method in which the back side of the wafer, which has a device region and a peripheral edge region surrounding the device region on the front side, is ground to be circular Recess to form only in a central position corresponding to the device area, so that a reinforcing annular projection is formed around the circular recess on the back of the wafer, which corresponds to the peripheral edge region.
    For dividing such a wafer along the streets (division lines) with the wafer having an annular protrusion on the back side along the outer periphery of the wafer, a method has been proposed which includes the steps of removing the annular protrusion and then cutting the wafer along the wafer Roads from the front side using a cutting blade includes (see JP 2007-19379 A). In this case, to remove the annular projection, a method of grinding the annular projection to remove it, or a method is proposed, which is a circular cutting of the boundary between the circular recess corresponding to the component region, and the annular projection and a subsequent removal of the annular protrusion comprises of the device region.
    However, there are several problems in removing the annular protrusion from the device area. Thus, the annular protrusion is susceptible to damage, the component area may be damaged by damage to the annular protrusion, and a special device for removing the annular protrusion is needed. Consequently, it is difficult and expensive to easily remove the annular projection.
    An object of the invention is therefore to propose a method of the type described, with which the annular projection can be easily removed without causing damage to the wafer.
    Accordingly, the invention provides a method as set forth above characterized by: attaching a first tape to the front of the wafer and attaching the wafer to a first annular frame by means of the first tape; holding the wafer by the first band on a chuck table and then applying a laser beam to the boundary between the annular protrusion and the device area to cut the wafer and the first band along the boundary, thereby separating the device area from the annular protrusion becomes; and subsequently removing the annular protrusion together with the first annular frame from the component area of the wafer in the state where the annular protrusion is fixed to the first annular frame by the first band.
    Preferably, the machining process is further characterized by: - attaching a second tape to the back side of the wafer which, after removal of the annular projection, is composed only of the device region, and attaching the wafer by the second tape to a second annular frame; removing the first tape from the front of the wafer before or after attaching the second tape to the back of the wafer; and - dividing the wafer into a plurality of chips corresponding to the plurality of components after attaching the second tape and removing the first tape
    Preferably, the method is further characterized by: forming a water-soluble protective film on the backside of the wafer prior to separating the tape element region from the annular protrusion; and supplying water to the back surface of the wafer after forming the protective film and separating the band member region from the annular protrusion to remove the protective film.
    In the present method, the separation step is performed by using a laser beam. Thereafter, the annular projection secured to the first band is removed from the device area of the wafer along with the first annular frame. Accordingly, the annular protrusion can be easily removed from the device area without causing damage. Also, since the separation step is performed by means of a laser beam, there is no danger of corrosion in the case where a metal film is formed on the back side of the wafer inside the circular recess. Further, when using a laser beam, the width of the notch formed by the laser beam may be smaller than that of a notch formed by a cutting blade, so that an effective device area can be maximized.
    The invention will be further explained by means of preferred embodiments with reference to the drawings. In the drawings: FIG. 1 is a perspective view of a semiconductor wafer from the top front; FIG. Fig. 2 is a perspective view of this wafer from the back side in the state where a protective tape is attached to the front side of the wafer; FIG. Fig. 3 is a perspective view of a backside grinding step; FIG. 4 is a sectional view of the wafer processed in the backside grinding step; FIG. 5 is a perspective view of a wafer at a first tape fastening step; FIG. Fig. 6 is a perspective view of a laser processing apparatus; FIG. Fig. 7 is a sectional view of forming a protective film; FIG. 8 is a perspective view of a separating step; FIG. 9 is an enlarged sectional view of the separating step; FIG. FIG. 10 is a perspective view of a wafer removing the annular protrusion; FIG. FIG. Fig. 11 is a sectional view of cleaning a wafer; FIG. Fig. 12 is a perspective view of a second band fastening step; FIG. Fig. 13 is a perspective view of a first tape removing step; and FIG. 14 is a perspective view of a wafer at the pitch.
    In FIG. 1 is a perspective view of a semiconductor wafer 11 (hereinafter simply referred to as a wafer) having a front side Ha. The wafer 11 is formed of a silicon having, for example, a thickness of 700 μm. Several intersecting streets ("streets"), i. Dividing lines 13 are formed on the front side 11a of the wafer 11 to thereby define a plurality of separate rectangular regions in which devices 15 such as ICs and LSIs are formed. The front side 11 a of the wafer 11 generally consists of a component region 17, where the components 15 are formed, and a peripheral edge region 19, which surrounds the component region 17. Further, the outer periphery of the wafer 11 is provided with a notch 21 as a mark for indicating the crystal direction of the silicon wafer.
    Before grinding the back side 11b of the wafer 11, a guard band 23 is attached to the front side 11a of the wafer 11, as shown in FIG. 2 shown. Accordingly, in FIG. 2, the front 11a of the wafer 11 is protected by the protective tape 23, and the back 11b of the wafer 11 is exposed, as shown in FIG. 2 shown.
    The wafer 11 as a workpiece to be processed by the present method as shown in FIG. 3 is a wafer 11 having a circular recess 18 and an annular projection 20 surrounding the circular recess 18 on the back side of the wafer 11 wherein the circular recess 18 is formed by grinding the back surface 11b of the wafer 11 in a region corresponding to the device region 17 at the front side (see Fig. 1) to reduce the thickness of the wafer 11 in this region to a predetermined thickness so that the annular projection 20 corresponding to the peripheral edge portion 19 is formed around the circular recess 18. The sanding process (back sanding step), i. the grinding of the back side 11b of the wafer 11 will be described below with reference to FIG. 3 and 4 described.
    The backside grinding step is carried out by means of a grinding apparatus having a grinding unit 2 (see FIG.3). As shown in Fig. 3, the grinding unit 2 comprises a spindle housing 4, a spindle 6 rotatably supported in the spindle housing 4, a disk support 8 fixed to the lower end of the spindle 6, and a grinding wheel 10 detachably attached thereto the lower surface of the disk carrier 8 is fixed. The grinding wheel 10 is composed of an annular disc base 12 and a plurality of grinding members 14 fixed to the lower surface of the annular disc base 12 so as to be annularly arranged along the outer circumference of the disc base 12. During the backside grinding step, the wafer 11 is sucked on a chuck table 16 of the grinding apparatus in the state where the protective tape 23 attached to the front side 11a of the wafer 11 is in contact with the upper surface of the chuck table 16 held that the back 11 b of the wafer 11 is freely accessible. In this state, the chuck table 16 is rotated at 300 rpm, for example, in the direction indicated by an arrow A in FIG. 3, and the grinding wheel 10 is rotated at 6000 rpm, for example, in the direction indicated by an arrow B in FIG. 3 is rotated. Further, a grinding unit feeding mechanism (not shown) included in the grinding apparatus is operated to lower the grinding unit 2 until the grinding members 14 of the grinding wheel 10 come in contact with the back 11 b of the wafer 11. Thereafter, the grinding fin feeder mechanism is further executed to sink the grinding wheel 10 by a predetermined value at a predetermined feeding speed. As a result, the rear side 11b of the wafer 11 is ground in its central area, which corresponds to the component area 17, whereby a circular recess 18, as shown in FIG. 2 and 4 is formed. At the same time, the peripheral portion on the back side 11b is left around the circular recess 18 as an annular projection 20 corresponding to the peripheral edge portion 19, as shown in FIG. 3 and 4 shown.
    After performing this grinding step, a first tape attaching step of FIG. 5 is performed in the following manner. First, the protective tape 23 attached to the front side 11 a of the wafer 11 is peeled off from the wafer 11. Thereafter, a first so-called dicing tape TI is attached as the adhesive tape to the front side 11a of the wafer 11, and the wafer 11 is then fixed to a first annular frame F1 by the first dicing tape TI (FIG.5). In other words, the front side 11a of the wafer 11 is attached to the first dicing tape TI whose peripheral part is attached to the first annular frame
    Fl is attached.
    According to a modification, the protective tape 23 attached to the front side 11a of the wafer 11 is not peeled off from the wafer 11, however, the first dicing tape TI may be attached to the front side 11a of the wafer 11 via the protective tape 23.
    In FIG. FIG. 6 is an oblique view of a laser processing apparatus 22 for use in dividing the device area 17 and the annular protrusion 20 from each other. As shown in FIG. As shown in FIG. 6, the laser processing apparatus 22 includes a control panel 24 to allow an operator to input instructions, such as processing conditions, into the laser processing apparatus 22. The control panel 24 is provided in the front area of the laser processing apparatus 22. The laser processing apparatus 22 further includes a display unit 26, such as a cathode ray tube (CRT), for displaying to the operator an orientation view or an image obtained by an image acquisition unit, as described below. The display unit 26 is provided in the upper area of the laser processing apparatus 22. As shown in FIG. 5, the wafer 11 processed by the back surface grinding step is held on the annular frame F1 by the first dicing tape TI. Several (e.g., 25) such wafers 11, each held by the first dicing tape TI on the first annular frame F1, are stored in a wafer cassette 28 shown in FIG. The wafer cassette 28 is placed on a vertically movable cassette lifter 29.
    Behind the wafer cassette 28, there are provided wafer handling means 30 for taking out a desired wafer 11 of the plurality of wafers 11 from the wafer cassette 28 before laser processing, and also for returning the wafer 11 to the wafer cassette 28 after the laser processing. A temporary placement area 32 for temporarily placing the wafer 11, which is manipulated by the wafer handling means, is provided between the wafer cassette 28 and the wafer handling means 30. Positioning means, eg, a pair of centering guides 34 for positioning the wafer 11 are arranged in the temporary placement area 32.
    Further, a protective film forming unit 50 for forming a protective film is provided on the back surface 11b of the wafer 11 before the laser processing. The protective film forming unit 50 also serves as a cleaning unit for cleaning the wafer 11 after the laser processing. First transfer means 36 having a pivotable arm for transferring the wafer 11 by suction-holding the first annular frame F1 holding the wafer 11 are provided in the vicinity of the temporary placement area 32. The wafer 11, which has been removed from the wafer cassette 28 and positioned in the temporary placement area 32, is transferred by the first transfer means 36 to the protective film forming unit 50. As described later, the protective film forming unit 50 functions by applying a water-soluble resin to the back surface 11 b of the wafer 11, thereby forming a protective film on the back surface 11 b of the wafer 11.
    After forming the protective film on the back surface 11b of the wafer 11, the wafer 11 is transferred by the first transfer means 36 to a chuck table 38. There, the wafer 11 is held under suction on the clamping table 38. Further, the first annular frame F1 holding the wafer 11 through the first dicing tape TI is fixed by a plurality of clamps 39 as fixing means. The clamping table 38 is rotatable and in the X direction according to the in FIG. 6 shown movable coordinate system. An alignment unit 40 for detecting a laser-to-be-processed portion of the wafer 11 is provided above the movement path of the chuck table 38 in the X-direction.
    The alignment unit 40 has an image capture unit 42 for imaging the wafer 11. In accordance with an image captured by the image capture unit 42, the alignment unit 40 may recognize the subject area of the wafer 11 by performing image processing such as pattern matching. The image captured by the image capture unit 42 is displayed by the display unit 26. A laser beam unit 44 for applying a laser beam to the wafer 11, which is held on the chuck table 28, is on the left
    Side of the alignment unit 40, as shown in FIG. 6 shown. The laser beam unit 44 is in the Y direction, as shown in FIG. 6 movable.
    The laser beam unit 44 has a housing 46 and a laser beam generating unit (not shown) provided in the housing 46 for generating a laser beam. The laser beam generating unit has a laser oscillator such as a YAG laser oscillator. The laser beam unit 44 further includes focusing means 48 mounted on the front end of the housing 46 to focus the laser beam generated by the laser beam generating unit. The laser beam focused by the focusing means 48 is applied to the wafer 11 held on the chuck table 38, whereby laser processing of the wafer 11 is performed. After performing the laser processing, the wafer 11 is transferred from the chuck table 38 to the protective film forming unit 50 by second transfer means 52. In the protective film forming unit 50, which also serves as a cleaning unit, the wafer 11 is cleaned.
    Hereinafter, formation of a protective film on the back side 11b of the wafer 11 by means of the protective film forming unit 50 will be described with reference to FIG. 7 described. This protective film forming step is an optional step and is usually unnecessary. However, it is performed when a metal film on the back 11b of the wafer 11, that is on the
    Bottom surface of the circular recess 18, is formed. As shown in FIG. 7, the protective film forming unit 50 includes a spinner table 54 and a cleaning water tank 56 arranged to surround the spinner table 54.
    The spinning table 54 is composed of a suction holding member formed of a porous material such as porous ceramic and a fixing member provided around the suction holding member to fix it. The spinner table 54 is equipped with a plurality of pendulum-type clamps 58 for fixing the first annular frame F1 holding the wafer 11 through the first dicing tape TI. The spin table 54 is connected to an output shaft 60 of an electric motor 59.
    The protective film forming unit 50 further includes a nozzle 62 for supplying water-soluble resin before the laser processing to the semiconductor wafer 11 held on the spinning table 54, and a cleaning water nozzle 66 for supplying cleaning water to the wafer 11 after the laser processing. The water-soluble resin nozzle 62 is configured to be rotated (horizontally pivoted) between a standby position and a supply position by operating a motor 64. Similarly, the cleaning water nozzle 66 is configured to be rotated (horizontally pivoted) between a standby position and a supply position by operating a motor 68.
    In performing the protective film forming step, the wafer 11 shown in the first tape attaching step shown in FIG. 5, is first transferred from the temporary placement area 32 to the protective film forming unit 50 by operating the first transfer means 36. Then, the wafer 11 is placed on the spinning table 54 of the protective film forming unit 50. Thereafter, the motor 64 is operated to move the resin nozzle 62 from the standby position to the supply position shown in FIG. 7, to bring. In this supply position, the water-soluble resin is supplied from the nozzle 62 to the wafer 11 in its central area. Thereafter, the electric motor 59 is operated to rotate the spinner table 54 at about 2000 rpm in the direction indicated by an arrow RI in FIG. 7 is shown. Accordingly, spin coating of the entire lower surface of the circular recess 18 formed on the back surface 11b of the wafer 11 with the water-soluble resin supplied to the wafer 11 is performed.
    The spinner table 54 is rotated at about 2000 rpm, i. at a relatively high speed, so that the pendulum-type clamps 58 are swung vertically due to the rotation of the spin table 54 by the centrifugal force, thus clamping the first annular frame F1 supporting the wafer 11 held on the spinning table 54. Accordingly, the water-soluble resin supplied to the circular recess 18 of the wafer 11 is over the entire
    Bottom surface of the circular recess 18 by spin coating applied, whereby a water-soluble protective film on the lower side of the circular recess 18 is formed. Examples of the water-soluble resin constituting the water-soluble protective film are PVAL (polyvinyl alcohol), PEG (polyethylene glycol) and PEO (polyethylene oxide).
    After performing the first tape attaching step, or after performing the first tape attaching step and the subsequent protective film forming step, a separating step is performed such that the device region 17 and the annular protrusion 20 of the wafer 11 are processed by using the laser processing apparatus 22 shown in FIG. 6, separated from each other. This separation step will be described below with reference to FIG. 8 described.
    As shown in FIG. 8, the wafer 11 fixed to the first annular frame F1 by the first dicing tape TI is sucked on the chuck table 38 of the laser processing apparatus 22 in the state where the first dinging tape TI, the first dicing tape TI is fixed to the front surface 11a of the wafer 11, is in contact with the upper surface of the chuck table 38, ie the back 11b of the wafer 11 is exposed. Thereafter, an alignment is made in a manner that the wafer 11 is image-detected by the image capturing unit 42 to detect the boundary between the annular protrusion 20 and the device region 17 (the circular one)
    Notch 18), and so that the coordinate values for the boundary detected as mentioned above are subsequently stored in a memory included in the alignment unit 40.
    After performing the alignment as mentioned above, a laser beam having an absorption wavelength (e.g., 355 nm) to the wafer 11 is applied from the focusing means 48 of the laser beam application unit 44 to the boundary between the annular projection 20 and the circular recess 18. At the same time, the chuck table 38 is rotated to thereby circularly remove the boundary between the annular projection 20 and the circular recess 18 by ablation using the laser beam applied by the focusing means 48. Preferably, as shown in FIG. 9, the chuck table 38 is composed of a suction holding member 38a and a fixing member 38b having an annular notch 27 formed to correspond to the boundary between the annular protrusion 20 and the circular recess 18, wherein a laser beam absorbing member 29 in FIG the annular notch 27 is provided. Accordingly, it is possible to prevent the laser beam coming from the focusing means 48 from working or damaging the fixing member 38b of the chuck table 38. Thus, the laser beam is applied to the entirety of the circular boundary between the annular projection 20 and the circular recess 18, thereby forming a full cutting groove (notch) 25 which separates the device portion 17 from the annular projection 20 of the wafer 11 and also the first dicing. Band TI in a central portion which is fixed to the device portion 17, and a peripheral portion which is fixed to the annular projection 20, separates (separation step).
    After performing the separating step, a removing step is performed such that the annular projection 20 fixed to the first annular frame F1 by the peripheral part of the first dicing tape TI is separated from the device region 17 of the wafer 11 as shown in FIG. 10 is removed. In the case where the above-mentioned protective film-forming step is performed, a protective-film removing step consisting of removing the protective film by supplying cleaning water to the back surface 11b of the wafer 11 after performing the separating step is performed. This protective film removing step will be described below with reference to FIG. 11 described.
    As shown in FIG. 11, the wafer 11 fixed to the first annular frame F1 by the first dicing tape TI is suction-sucked on the spinning table 54 of the protective film forming unit 50 in the state where the first dicing tape TI attached to the first dicing tape TI Front 11 a of the wafer 11 is fixed, in contact with the upper surface of the clamping table 54 is held, ie the back surface 11b of the wafer 11 is exposed, the protective film being formed on the lower surface or bottom surface of the circular recess 18 on the back surface 11b of the wafer 11, i.e., on the back surface 11b of the wafer 11; the protective film is formed on the back surface 11b of the wafer in the region corresponding to the device region 17. In this condition, the motor 68 is operated to move the cleaning water nozzle 66 from the standby position to the supply position shown in FIG. 11, to twist. Thereafter, cleaning water is supplied from the cleaning water nozzle 66 to the wafer 11 in its central area. At the same time, the electric motor 59 is operated to rotate the spinner table 54 at about 1000 rpm in the direction indicated by an arrow RI in FIG. 11 is shown. Since the protective film is a water-soluble protective film, the protective film can be removed from the back surface 11b of the wafer 11 by this cleaning step (protective film removing step).
    After performing the separating step and the subsequent protective film removing step as mentioned above, the removing step is performed to remove the annular protrusion 20 fixed to the first annular frame F1 by the peripheral part of the first dicing belt TI from the device region 17 of the wafer 11 to remove, as shown in FIG. 10. Accordingly, the device portion 17 attached to the central portion of the first band TI remains on the chuck table 38.
    After performing the removal step, a second tape attaching step is performed in the following manner, as shown in FIG. 12 shown. A second dicing tape T2 is attached to the back 11b of the wafer 11, which at this time is formed only of the device region 17, and the wafer 11 is then attached to a second annular frame F2 by the second dicing tape T2 in FIG. 12 shown. By performing the second tape attaching step, the wafer 11 composed of only the device portion 17 in the state where the first dicing tape TI remains fixed to the front side 11a of the wafer 11 is fixed to the second dicing tape T2 attached to the second annular frame F2.
    After performing this second tape attaching step, a first tape removing step is performed such that the first dicing tape TI from the front side 11a of the wafer 11 as shown in FIG. 13 is removed. Alternatively, the first belt removal step may be performed prior to performing the second belt attachment step. After performing the second tape attaching step and the first tape removing step, a dividing step consisting of dividing the wafer 11 into individual components 15 is performed.
    For example, the division step is performed by means of a cutting device 70 according to FIG. 14 performed. In FIG. 14, an essential part of the cutting device 70 is shown.
    The cutting device 70 includes a cutting unit 74 having a spindle housing 76, a spindle (not shown) provided in the spindle housing 76 so as to be rotatably driven by a motor (not shown), and a cutting blade 78 detachably attached to the front end of the spindle.
    The cutting blade 78 is included with a disc cover 80. The disc cover 80 is provided with a pair of tubes 82 connected to a cutting water source (not shown). The disc cover 80 is further provided with a pair of cutting water nozzles 84 (one shown) connected to the pair of tubes 82. The pair of cutting water nozzles 84 are arranged so that the cutting blade 78 lies between them. Accordingly, when cutting the wafer 11 (the device area 17), cutting water supplied to the tubes 82 from the cutting water source is discharged from the cutting water nozzles 84 onto the cutting blade 78.
    In other words, the device region 17 is cut by the cutting blade 78 while the cutting water is discharged from the cutting water nozzles 84 onto the cutting blade 78.
    At the same time, the cutting blade 78 is driven at a high speed (e.g., 30,000 rpm) in the direction indicated by an arrow A in FIG. 14 and a chuck table 72 included in the cutter 70 is moved in the X direction as shown in FIG. 14, wherein the device region 17, which is fixed to the second annular frame F2 by the second dicing tape T2, in the state where the front side of the device region 17 (the front side 11a of the wafer 11) faces upward, is held on the clamping table 72. Accordingly, the device area 17 is cut along each road 13 so as to have a cutting groove (notch) 31 along each road 13, as shown in FIG. 14 to form.
    Specifically, the device region 17 is first propagated along all the streets 13 extending in a first direction, sequentially advancing the cutting unit 74 in the Y direction as shown in FIG. 14 cut by the distance of the streets 13. Thereafter, the chuck table 72 is rotated 90 degrees to similarly perform such a cutting operation along all remaining roads 13 extending in a second direction perpendicular to the first direction. In this way, the device region 17 of the wafer 11 is divided into the individual components 15.
    This division step is not limited to such a cutting step (dicing step) by means of a cutting device 70, but may be a laser processing step. For example, ablation may be applied using a laser beam to form a laser-machined groove (notch) on the wafer 11 along each road 13. As a modification, the laser beam may be applied to the wafer 11 to form a modified layer within the wafer 11 along each road 13. Thereafter, an external force may be applied to the wafer 11 so as to break the wafer 11 along each road 13 where the modified layer is formed. In this way, the device region 17 of the wafer 11 can be divided into individual components 15 by means of a laser beam. In this case, the laser beam can be applied from the front side of the wafer 11 or from the back side of the wafer 11.
    Further, although the protective tape 23 is fixed to the front side 11a of the wafer 11 before grinding the back 11b of the wafer 11 to form the circular recess 18 and the annular projection 20 in the above preferred embodiment, the protective tape 23 according to the present invention Invention should also be omitted. That is, the first tape attaching step may be performed prior to grinding the back side 11b of the wafer 11 with the first dicing tape TI attached as the adhesive tape to the front side 11a of the wafer 11 and the wafer 11 attached to the first dicing tape TI at the first annular frame Fl is attached.
    The invention is not limited to the details of the preferred embodiment described above, but changes and modifications are possible within the scope of the invention.
    权利要求:
    Claims (3)
    [1]
    A method of processing a wafer comprising a device region where a plurality of devices are formed and a peripheral edge region surrounding the device region on a front side of the wafer, wherein a circular recess corresponding to the device region is on a back side of the wafer is formed by grinding the wafer to a predetermined thickness and an annular projection corresponding to the peripheral edge portion is formed around the circular recess, characterized by attaching a first tape to the front side of the wafer and fixing the wafer by means of the first band on a first annular frame; holding the wafer by the first band on a chuck table and then applying a laser beam to the boundary between the annular protrusion and the device area to cut the wafer and the first band along the boundary, thereby separating the device area from the annular protrusion becomes; and subsequently removing the annular projection together with the first annular frame from the component area of the wafer in the state where the annular projection is fixed to the first annular frame by the first band.
    [2]
    The method of claim 1, characterized by - attaching a second tape to the back side of the wafer, which after removal of the annular protrusion consists only of the device region, and attaching the wafer by the second tape to a second annular frame; removing the first tape from the front of the wafer before or after attaching the second tape to the back of the wafer; and - dividing the wafer into a plurality of chips corresponding to the plurality of components after attaching the second tape and removing the first tape.
    [3]
    A method according to claim 1 or 2, characterized by - forming a water-soluble protective film on the back surface of the wafer prior to separating the tape element portion from the annular projection; and supplying water to the back surface of the wafer after forming the protective film and separating the band member region from the annular protrusion to remove the protective film.
    类似技术:
    公开号 | 公开日 | 专利标题
    AT515730A2|2015-11-15|Method for processing wafers
    DE102004055443B4|2012-02-16|Wafer processing method
    DE102004025707B4|2011-03-17|Method of dividing a non-metallic substrate
    DE102004051180B4|2011-02-24|Wafer dividing method
    DE102005004827B4|2011-03-31|Wafer dividing method
    DE102004029094B4|2010-11-18|Method for producing a semiconductor chip
    DE10312662B4|2008-06-05|Semiconductor device manufacturing arrangement and semiconductor device manufacturing method for forming semiconductor chips by dividing semiconductor wafers
    DE102005033953B4|2013-09-26|Wafer-dividing process and apparatus
    DE102004029091B4|2010-11-25|Partitioning device for plate-like workpiece
    DE102005047110B4|2013-03-28|Wafer dividing method and device
    DE102017206400B4|2022-03-03|PROCESSING PROCESS FOR A WAFER
    DE102009004168B4|2020-12-10|Layered component manufacturing process
    DE102015208897A1|2015-11-19|Wafer processing method
    DE102013208352A1|2013-11-14|Wafer processing method
    DE102005004845B4|2012-01-26|Wafer dividing method
    DE102008022745A1|2008-11-20|Wafer dividing method
    DE102015220379A1|2016-04-21|Water processing method
    DE102013208490A1|2013-11-14|Workpiece dividing method
    DE102015208890A1|2015-11-19|Wafer processing method
    DE102013205644A1|2013-10-02|Method for forming chips i.e. semiconductor chips, with adhesive films, involves attaching adhesive film to rear of wafer, and separating wafer from adhesive film to obtain individual chips such that each chip is mounted on rear side film
    DE102016208307A1|2016-11-24|WAFER PROCESSING PROCEDURES
    DE102009004567A1|2009-07-23|Wafer separation process
    DE102012220161A1|2013-05-08|Processing method for a wafer having a chamfered portion along the outer periphery thereof
    DE102011082244A1|2012-04-26|Wafer processing method
    DE102016224214A1|2017-06-08|Processing method for a wafer
    同族专利:
    公开号 | 公开日
    DE102015208893A1|2015-11-19|
    KR20150130228A|2015-11-23|
    JP6385131B2|2018-09-05|
    JP2015213955A|2015-12-03|
    US20150332928A1|2015-11-19|
    TW201543562A|2015-11-16|
    US9472442B2|2016-10-18|
    DE202015009750U1|2019-11-25|
    TWI641036B|2018-11-11|
    AT515730A3|2017-10-15|
    CN105097483B|2019-11-29|
    CN105097483A|2015-11-25|
    MY170046A|2019-06-26|
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    US7148126B2|2002-06-25|2006-12-12|Sanken Electric Co., Ltd.|Semiconductor device manufacturing method and ring-shaped reinforcing member|
    JP2005101290A|2003-09-25|2005-04-14|Disco Abrasive Syst Ltd|Method for dicing semiconductor wafer|
    JP4342992B2|2004-03-17|2009-10-14|株式会社ディスコ|Laser processing machine chuck table|
    JP5390740B2|2005-04-27|2014-01-15|株式会社ディスコ|Wafer processing method|
    CN100501932C|2005-04-27|2009-06-17|株式会社迪斯科|Semiconductor wafer and method for processing same|
    JP2007019379A|2005-07-11|2007-01-25|Disco Abrasive Syst Ltd|Method for processing wafer|
    JP4791772B2|2005-07-14|2011-10-12|株式会社ディスコ|Wafer processing method|
    JP2008153349A|2006-12-15|2008-07-03|Disco Abrasive Syst Ltd|Wafer dividing method|
    US20080242052A1|2007-03-30|2008-10-02|Tao Feng|Method of forming ultra thin chips of power devices|
    JP2008283025A|2007-05-11|2008-11-20|Disco Abrasive Syst Ltd|Method of dividing wafer|
    JP5111938B2|2007-05-25|2013-01-09|日東電工株式会社|Method for holding semiconductor wafer|
    JP5296386B2|2008-01-11|2013-09-25|株式会社ディスコ|Manufacturing method of laminated device|
    JP2010062375A|2008-09-04|2010-03-18|Disco Abrasive Syst Ltd|Method of processing wafer|
    JP5133855B2|2008-11-25|2013-01-30|株式会社ディスコ|Protective film coating method|
    JP2011243906A|2010-05-21|2011-12-01|Disco Abrasive Syst Ltd|Method of processing wafer|
    JP5544228B2|2010-07-14|2014-07-09|株式会社ディスコ|Wafer processing method|
    JP5654810B2|2010-09-10|2015-01-14|株式会社ディスコ|Wafer processing method|
    JP5755043B2|2011-06-20|2015-07-29|株式会社ディスコ|Processing method of semiconductor wafer|
    JP6004705B2|2012-04-02|2016-10-12|株式会社ディスコ|Method for forming chip with adhesive film|
    JP2014053510A|2012-09-07|2014-03-20|Toshiba Corp|End face processing method and end face processing device|
    US8975162B2|2012-12-20|2015-03-10|Applied Materials, Inc.|Wafer dicing from wafer backside|
    US9206037B2|2014-03-04|2015-12-08|Disco Corporation|MEMS device chip manufacturing method|JP6672053B2|2016-04-18|2020-03-25|株式会社ディスコ|Wafer processing method|
    JP6908464B2|2016-09-15|2021-07-28|株式会社荏原製作所|Substrate processing method and substrate processing equipment|
    JP6887722B2|2016-10-25|2021-06-16|株式会社ディスコ|Wafer processing method and cutting equipment|
    JP6739873B2|2016-11-08|2020-08-12|株式会社ディスコ|Wafer processing method|
    US10829866B2|2017-04-03|2020-11-10|Infineon Technologies Americas Corp.|Wafer carrier and method|
    JP6866217B2|2017-04-21|2021-04-28|株式会社ディスコ|Cutting equipment|
    JP6909621B2|2017-04-24|2021-07-28|株式会社ディスコ|Water jet processing equipment|
    JP6906843B2|2017-04-28|2021-07-21|株式会社ディスコ|Wafer processing method|
    CN110312590A|2019-02-12|2019-10-08|大族激光科技产业集团股份有限公司|A kind of processing method, device and the system of hard brittle prod|
    DE102020206233B3|2020-05-18|2021-08-12|Disco Corporation|METHOD FOR MANUFACTURING A SUBSTRATE AND SYSTEM FOR MANUFACTURING A SUBSTRATE|
    CN111604604A|2020-06-28|2020-09-01|安徽富信半导体科技有限公司|Forming equipment for processing semiconductor element and using method thereof|
    CN112475627A|2020-11-17|2021-03-12|华虹半导体有限公司|Ring removing method for Taiko thinned wafer|
    CN112974324A|2021-03-01|2021-06-18|长江存储科技有限责任公司|Wafer cleaning brush and wafer cleaning device|
    法律状态:
    优先权:
    申请号 | 申请日 | 专利标题
    JP2014099269A|JP6385131B2|2014-05-13|2014-05-13|Wafer processing method|
    [返回顶部]